@Article{BaranauskasCLPTCSL:2000:DiCoPo,
               author = "Baranauskas, V. and Chang, D. C. and Li, B. B. and Peterlevitz, A. 
                         C. and Trava-Airoldi, Vladimir Jesus and Corat, Evaldo Jose and 
                         Singh, R. K. and Lee, D. G.",
          affiliation = "Baranauskas V (reprint author), Univ Estadual Campinas, Fac Engn 
                         Eletr \& Comp, Av Albert Einstein,N400, Campinas, SP BR-13083970 
                         Brazil and Univ Estadual Campinas, Fac Engn Eletr \& Comp, 
                         Campinas, SP BR-13083970 Brazil and Inst Nacl Pesquisas Espaciais, 
                         Lab Associado Sensores \& Mat, Sao Jose Dos Campos, BR-12201 
                         Brazil and Univ Florida, Dept Mat Sci \& Engn, Gainesville, FL 
                         32611 USA",
                title = "Diamond coating of porous silicon",
              journal = "Journal of Porous Materials",
                 year = "2000",
               volume = "7",
               number = "1-3",
                pages = "401--404",
                month = "Jan.",
             keywords = "porous silicon coating, diamond on porous silicon, diamond 
                         nucleation.",
             abstract = "Diamond coatings on porous silicon (PS) samples have been obtained 
                         by the hot-filament chemical vapor deposition(CVD) technique. We 
                         focused our attention on the coating morphology, showing 
                         experimentally that high quality diamond coatings may be produced 
                         with the PS sample kept at 710 degrees C. The deposited patterns 
                         consist of polycrystalline grains with a plane interface with the 
                         PS layer. At 790 degrees C, the quality of the coating is improved 
                         but the PS layer becomes damaged, and at 650 degrees C the coating 
                         consists of diamond-like carbon particles. Besides the 
                         temperature, other factors such as the porosity, roughness and 
                         chemical activity of the PS layer deserve attention. We observed 
                         that one of the limiting factors of the deposition process was the 
                         high nucleation time. Two nucleation mechanisms are involved in 
                         the growth process. The first nucleation mechanism occurs on the 
                         top of the sharp PS features, subsequently to the nucleation a 
                         superficial film, and then a second nucleation mechanism occurs 
                         over this surface, which allows the growth process to continue. We 
                         also observed the presence of a blue-shift in the luminescence 
                         spectra following the coating.",
           copyholder = "SID/SCD",
                 issn = "1380-2224",
             language = "en",
           targetfile = "diamond coating.pdf",
        urlaccessdate = "10 maio 2024"
}